hanbi t hm d16m64d16ev url: www.hbe.co.kr - 1 - hanbit electronics co.,ltd. rev.1.0 (august.2002) general description the HMD16M64D16EV is a 16mx 64 bits dynamic ram high density memory module. the HMD16M64D16EV consists of six teen cmos 16mx4bits drams in tsop ?? 400mil package s mounted on a 168 - pin glass - epoxy substrate. a 0.1 or 0.22uf decouplin g capacitor is mounted on the printed circuit board for each dram. the HMD16M64D16EV is a dual in - line memory module and is intended for mounting into 168 pin edge connector sockets features performance range w part identification HMD16M64D16EV - - --- 4kcycles/64ms ref, gold plate lead HMD16M64D16EVa --- 8kcycles/64ms ref, gold plate lead w high - density 128 mbyte design w n ew jedec standard proposal without buffer w cas - before - ras refresh capability w ras - only and hidden refresh capability w single +3.3 0.3v power supply w timing w marking w edo mode operation . 50 n s access - 5 w lv ttl compatible inputs and outputs 60 n s access - 6 w fr4 - pcb design w packages w marking w access times : 50, 60ns 168 - pin dimm d pin names pin name function pin name function pin name function a0 - a11 address input (4k ref) /ras0, /ras 2 row address strobe vss ground a0 - a12 address input (8k ref) /cas0 - /cas 7 column address strobe vcc p ower (+ 3.3 v) /w e0,/we2 read/write enable scl serial clock dq0 - dq 63 data in/out /oe0,/oe2 output enable nc no connection sda serial address /data i/o sa0 - sa2 address in eeprom cb0 - cb7 check bit sp eed t rac t cac t rc t hpc - 5 50ns 13ns 84ns 20ns - 6 60ns 15ns 104ns 25ns 128mbyte(16mx64) edo mode 4k/8k ref. 3.3v, dimm 168 pin part no. hm d16m64d 16ev
hanbi t hm d16m64d16ev url: www.hbe.co.kr - 2 - hanbit electronics co.,ltd. rev.1.0 (august.2002) pin symbol pin symbol pin symbol pin symbol pin symbol pin symbol 1 vss 29 /cas1 57 dq18 85 vss 113 /cas5 141 dq50 2 dq0 30 /ras0 58 dq19 86 dq32 114 nc 142 dq51 3 dq1 31 /oe0 59 vcc 87 dq33 115 nc 143 vcc 4 dq2 32 vss 60 dq20 88 dq34 116 vss 144 dq52 5 dq3 33 a0 61 nc 89 dq35 117 a1 145 nc 6 vcc 34 a2 62 nc 90 vcc 118 a3 146 nc 7 dq4 35 a4 63 nc 91 dq36 119 a5 147 nc 8 dq5 36 a6 64 vss 92 dq37 120 a7 148 vss 9 dq6 37 a8 65 dq21 93 dq38 121 a9 149 dq53 10 dq7 38 a10 66 dq22 94 dq39 122 a11 150 dq54 11 dq8 39 a12 67 dq23 95 dq40 123 nc 151 dq5 5 12 vss 40 vcc 68 vss 96 vss 124 vcc 152 vss 13 dq9 41 vcc 69 dq24 97 dq41 125 nc 153 dq56 14 dq10 42 nc 70 dq25 98 dq42 126 nc 154 dq57 15 dq11 43 vss 71 dq26 99 dq43 127 vss 155 dq58 16 dq12 44 /oe2 72 dq27 100 dq44 128 nc 156 dq59 17 dq13 45 /ras 2 73 vcc 101 dq45 129 nc 157 vcc 18 vcc 46 /cas2 74 dq28 102 vcc 130 /cas6 158 dq60 19 dq14 47 /cas3 75 dq29 103 dq46 131 /cas7 159 dq61 20 dq15 48 /we2 76 dq30 104 dq47 132 nc 160 dq62 21 nc 49 vcc 77 dq31 105 nc 133 vcc 161 dq63 22 nc 50 nc 78 vss 1 06 nc 134 nc 162 vss 23 vss 51 nc 79 nc 107 vss 135 nc 163 nc 24 nc 52 nc 80 nc 108 nc 136 nc 164 nc 25 nc 53 nc 81 nc 109 nc 137 nc 165 sa0 26 vcc 54 vss 82 sda 110 vcc 138 vss 166 sa1 27 /we0 55 dq16 83 scl 111 nc 139 dq48 167 sa2 28 /cas0 56 dq17 84 vcc 112 /cas4 140 dq49 168 vcc l a13, /ras1, /ras3, cb, sa, scl, sda pins are not used in this module. l a12 is used for only HMD16M64D16EVa (8k ref) p in assignment
hanbi t hm d16m64d16ev url: www.hbe.co.kr - 3 - hanbit electronics co.,ltd. rev.1.0 (august.2002) f unctional block diag ram vcc vss 0.1uf or 0.22uf capacitor to all drams dq 0 - 63 /cas0 /ras0 /oe0 /cas1 /cas2 /cas3 / w e0 a0 - a1 1 /cas dq0 - 3 /ras /oe /w a0 - a11 u 1 /cas dq4 - 7 /ras /oe /w a0 - a11 u 2 /cas dq 8 - 11 /ras /oe /w a0 - a11 u 3 /cas dq 12 - 15 /ras /oe /w a0 - a11 u 4 /cas dq1 6 - 19 /ras /oe /w a0 - a11 u 6 /cas dq 20 - 23 /ras /oe /w a0 - a11 u 7 /cas d q 24 - 27 /ras /oe /w a0 - a11 u 8 /cas dq 28 - 31 /ras /oe /w a0 - a11 u 9 /cas dq 32 - 35 /ras /oe /w a0 - a11 u 11 /cas dq 36 - 39 /ras /oe /w a0 - a11 u 12 /cas dq 40 - 43 /ras /oe /w a0 - a11 u 13 /cas dq 44 - 47 /ras /oe /w a0 - a11 u 14 /cas dq 48 - 51 /r as /oe /w a0 - a11 u1 5 /cas dq 52 - 55 /ras /oe /w a0 - a11 u1 6 /cas dq 56 - 59 /ras /oe /w a0 - a11 u 17 /cas dq 60 - 63 /ras /oe /w a0 - a11 u 18 /cas 4 /ras 2 /oe2 /cas5 /cas6 /cas7 /we2
hanbi t hm d16m64d16ev url: www.hbe.co.kr - 4 - hanbit electronics co.,ltd. rev.1.0 (august.2002) absolute maximum rat ings p arameter symbol rating voltage on any pin relative to vss v in ,out - 0.5v to 4.6v voltage on vcc supply relative to vss vcc - 0.5v to 4.6v power dissipation p d 16 w storage temperature t stg - 55 o c to 150 o c short circuit output current i os 50ma w permanen t device damage may occur if " absolute maximum ratings" are exceeded. functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. exposure to absolute maximum rating conditions for extend ed periods may affect device reliability. recommended dc opera ting conditions ( voltage reference to v ss , t a =0 to 70 o c ) parameter symbol min typ . max unit supply voltage vcc 3.0 3.3 3.6 v ground vss 0 0 0 v input high voltage v ih 2. 0 - vcc+0.3 v input low voltage v il - 0.3 - 0.8 v dc and operating cha racteristics (recommended operating conditions unless otherwise noted) HMD16M64D16EVa (8k ref) HMD16M64D16EV (4k ref) symbol speed min max min max units - 5 - 1400 - 1920 ma i cc1 - 6 1280 1760 ma i cc2 don't care - 32 - 32 ma - 5 - 1400 - 1920 ma i cc3 - 6 1280 1760 ma - 5 - 1600 - 1760 m a i cc4 - 6 1440 1600 ma i cc5 don't care - 8 - 8 ma - 5 - 1440 - 1920 m a i cc6 - 6 1280 1760 ma i l(l) 1 0 10 - 10 10 m a i o(l) 5 5 - 5 5 m a v oh 2.4 - 2.4 - v v ol - 0.4 - 0.4 v
hanbi t hm d16m64d16ev url: www.hbe.co.kr - 5 - hanbit electronics co.,ltd. rev.1.0 (august.2002) i cc1 : operating current * (/ras , /cas , address cycling @t rc =min.) i cc2 : standby current ( /ras=/cas=v ih ) i cc3 : /ras only refresh current * ( /cas=v ih , /ras, address cycling @t rc =min ) i cc4 : edo mode current * (/ras=v il , /cas, address cycling @t pc =min ) i cc5 : standby current (/ras=/cas=vcc - 0.2v ) i cc6 : /cas - before - /ras refresh current * (/ras and /cas cycling @t rc =min ) i il : input leakage current (any input 0v v in 4.5v, all other pins not under test = 0v) i ol : ou tput leakage current (data out is disabled, 0v v out 3.3v v oh : output high voltage level (i oh = - 2 ma ) v ol : output low voltage level (i ol = 2 ma ) * note: i cc1 , i cc3 , i cc4 and i cc6 are dependent on output loading and cycle rates. specified values are ob tained with the output open. i cc is specified as an average current. in i cc1 and i cc3 , address cad be changed maximum once while /ras=v il . in i cc4 , address can be changed maximum once within one page mode cycle. capacitance ( t a =2 5 o c, vcc = 3 .3 v, f = 1mz ) description symbol min max units input capacitance (a0 - a1 1 ) c in1 - 90 pf input capacitance (/w e0, /w e2, / oe0, / oe2 ) c in2 - 66 pf input capacitance (/ras0 ,/ras2 ) c in3 - 66 pf input capacitance (/cas0 - /cas 7 ) c in4 - 24 pf input/o utput capacitance (dq0 - 63 ) c dq1 - 17 pf ac characteristics ( 0 o c t a 70 o c , vcc = 3v 10%, see notes 1,2.) - 5 - 6 standard operation symbol min max min max unit random read or write cycle time t rc 8 4 104 ns read - modify - write cycle time t r w c 1 28 153 ns access time from /ras t rac 50 60 ns access time from /cas t cac 13 15 ns access time from column address t aa 25 30 ns /cas to output in low - z t clz 3 3 ns /oe to output in low - z t o lz 3 3 ns output buffer turn - off delay from /cas t off 3 13 3 13 ns transition time (rise and fall) t t 1 50 1 50 ns /ras precharge time t rp 30 40 ns /ras pulse width t ras 50 10k 60 10k ns /ras hold time t rsh 8 1 0 ns /cas hold time t csh 38 4 0 ns /cas pulse width t cas 8 10k 10 10k ns
hanbi t hm d16m64d16ev url: www.hbe.co.kr - 6 - hanbit electronics co.,ltd. rev.1.0 (august.2002) /ras to / cas delay time t rcd 17 37 20 45 ns /ras to column address delay time t rad 1 2 25 15 30 ns /cas to /ras precharge time t crp 5 5 ns row address set - up time t asr 0 0 ns row address hold time t rah 7 10 ns column address set - up time t asc 0 0 ns col umn address hold time t cah 7 1 0 ns column address hold referenced to /ras t rrh 0 0 ns column address to /ras lead time t ral 25 30 ns read command set - up time t rcs 0 0 ns read command hold referenced to /cas t rch 0 0 ns read command hold ref erenced to /ras t rrh 0 0 ns write command hold time t wch 7 10 ns write command pulse width t wp 7 10 ns write command to /ras lead time t rwl 8 10 ns write command to /cas lead time t cwl 7 10 ns data - in set - up time t ds 0 0 ns data - in hold t ime t dh 7 10 ns refresh period t ref 64 64 m s write command set - up time t wcs 0 0 ns /cas to /w delay time t c wd 33 38 ns /ras to /w delay time t rwd 70 84 ns column address to /w delay time t a wd 45 53 ns /cas precharge to /w delay time t c pw d 4 7 58 ns /cas setup time (/cas - before /ras refresh) t c sr 10 10 ns /cas hold time(/cas - before - /ras refresh) t chr 10 10 ns /ras to /cas precharge time t rp c 5 5 ns access time from /cas precharge t cpa 28 35 ns hyper page mode cycle time t h p c 20 25 ns hyper page mode read - modify write cycle time t h p rwc 67 73 ns /cas precharge time(hyper page cycle) t cp 7 10 ns /ras pulse width (hyper page cycle) t rasp 50 200k 60 200k ns /ras hold time from /cas precharge t rhc p 30 35 ns /oe access t ime t oea 13 15 ns /oe to date delay t oed 10 13 ns
hanbi t hm d16m64d16ev url: www.hbe.co.kr - 7 - hanbit electronics co.,ltd. rev.1.0 (august.2002) output buffer tune off delay time from /oe t oez 3 13 3 13 ns /oe command hold time t oeh 5 5 ns output data hold time t doh 5 5 ns output buffer turn off delay from /ras t rez 3 13 3 13 ns output buffer turn off delay from /we t wez 3 13 3 13 ns /we to data delay t wed 15 15 ns /oe to /cas hold time t och 5 5 ns /cas hold time to /oe t cho 5 5 ns /oe precharge time t oep 5 5 ns /we pulse width (hyper page cycle) t wpe 5 5 ns notes 1. an initial pause of 200 m s is required after power - up followed by any 8 /ras - only or /cas - before - /ras refresh cycles before proper device operation is achieved. 2. input voltage levels are v ih (min) and v il (max) are reference levels for measuring timing of input signals. transition times are measured between v ih(min) and v il(max) and are assumed to be 5ns for all inputs. 3. measured with a load equivalent to 1ttl loads and 100pf 4. operation within the t rcd(max) limit insures that t rac(max) can be met. t rcd(max) is spe cified as a reference point only. if t rcd is greater than the specified t rcd(max) limit, then access time is controlled exclusively by t cac . 5. assumes that t rcd 3 t rcd(max) 6 .this parameter defines the time at which the output achieves the open circuit condi tion and is not referenced to v oh or v ol . 7 . t wcs , t rwd , t cwd and t awd are non restrictive operating parameter. they are included in the data sheet as electrical characteristic only. if t wcs 3 twcs(min) the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle the data output will contain the data read from the selected address . if neither of the above conditions are satisfied, the condition of the data out is indeternimated. 8 . either t rch or t rrh must be satisfied for a read cycle. 9 . operation within the t rad(max) limit insures that t rac(max) can be met. t rad(max) is specified as a reference point only. if t rad is greater than the specified t rad(max) limit. then access time is controlled by t aa . 10. if /ras goes to high before /cas high going, the open circuit condition of the output is achieved by /cas high going. if /cas goes to high before /ras high going, the open circuit condition of the output is achieved by /ras high going. 11. t asc 3 6ns
hanbi t hm d16m64d16ev url: www.hbe.co.kr - 8 - hanbit electronics co.,ltd. rev.1.0 (august.2002) packaging information (front view) o r dering information part number density org. package component number vcc mode speed HMD16M64D16EV - 5 128mbyte 16mx64 168 pin - di mm 16ea 3.3v edo 50ns HMD16M64D16EV - 6 128mbyte 16mx 64 168 pin - dimm 16ea 3.3v edo 60ns 3.69 max 1.2 7 0. 1 mm 0.25 mm max min 2.54 mm 1.27 gold : 1.0 0mm
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